Investigating the wide energy gap of gallium nitride, which enables the emission of the highly energetic blue light

The wide energy gap of gallium nitride (GaN), which enables the emission of the highly energetic blue light by light-emitting diodes, is very attractive for the development of power devices. An additional advantage for these devices is the inherently high mobility of current carriers. These devices are referred to as high-electron mobility transistors (HEMTs).

GaN is currently deposited on either silicon carbide or sapphire wafers. Because of the small area and high cost of silicon carbide and sapphire wafers, there is an extensive research effort to deposit GaN on large-diameter silicon wafers. GaN on silicon wafers has already enabled commercialisation of some power devices, especially for high-frequency applications. However, mainstream power-electronics applications will require the development of HEMT s that act as normally off switches.

In addition to Griffith University research on the growth of GaN on our unique large-diameter silicon carbide/silicon wafers, this project is focused on the development of normally off GaN -based HEMT s. This research is conducted in collaboration with Shandong University and Inspur Huaguang Optoelectronics Co. Ltd.

Project team

Project leaders: Professor Sima Dimitrijev and Dr Jisheng Han.

Team members: Amirhossein Aminbeidokhti, Alan Iacopi, Hamid Moghadam, Dr Philip Tanner and Glenn Walker.

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